Erratum: Optoelectronic crystal of artificial atoms in strain-textured molybdenum disulphide (Nature Communications (2015) 6 (7381) DOI: 10.1038/ncomms8381);Optoelectronic crystal of artificial atoms in strain-textured molybdenum disulphide

Nature Communications

Volumn 6, Issue , 2015, Pages

  Li, Hong ^a   Contryman, Alex W ^b   Qian, Xiaofeng ^c   Ardakani, Sina Moeini ^d   Gong, Yongji ^e   Wang, Xingli ^e   Weisse, Jeffery M ^a   Lee, Chi Hwan ^a   Zhao, Jiheng ^a   Ajayan, Pulickel M ^e   Li, Ju ^d   Manoharan, Hari C ^b   Zheng, Xiaolin ^a  

^a Stanford University   (United States)

^b STANFORD UNIVERSITY   (United States)

^c Texas AandM University   (United States)

^d Massachusetts Institute of Technology Cambridge   (United States)

^e Rice University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MOLYBDENUM; MOLYBDENUM DISULPHIDE; UNCLASSIFIED DRUG;

COULOMB CRITERION; CRYSTAL STRUCTURE; ELASTIC PROPERTY; ELECTRICAL CONDUCTIVITY; ELECTRON; ELECTRONIC EQUIPMENT; MEMBRANE; MOLYBDENUM; SULFIDE (INORGANIC); TENSILE STRENGTH; VISIBLE SPECTRUM;

ARTICLE; ATOM; CRYSTAL; ELECTRONICS; LIGHT; LIGHT ABSORPTION; OPTICS; PHOTOLUMINESCENCE; RAMAN SPECTROMETRY; SEMICONDUCTOR;

EID: 84934900046     PISSN: None     EISSN: 20411723     Source Type: Journal    
DOI: 10.1038/ncomms9080     Document Type: Erratum

References (36)

1. Johari, P. & Shenoy, V. B. Tuning the Electronic Properties of Semiconducting Transition Metal Dichalcogenides by Applying Mechanical Strains. ACS Nano 6, 5449-5456 (2012).
2. Scalise, E., Houssa, M., Pourtois, G., Afanas'ev, V. & Stesmans, A. Straininduced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2. Nano Res. 5, 43-48 (2012).
3. Shi, H., Pan, H., Zhang, Y.-W. & Yakobson, B. I. Quasiparticle band structures and optical properties of strained monolayer MoS2 and WS2. Phys. Rev. B 87, 155304 (2013).
4. Wang, L., Kutana, A. & Yakobson, B. I. Many-body and spin-orbit effects on direct-indirect band gap transition of strained monolayer MoS2 and WS2. Ann. Phys. 526, L7-L12 (2014).
5. Rice, C. et al. Raman-scattering measurements and first-principles calculations of strain-induced phonon shifts in monolayer MoS2. Phys. Rev. B 87, 081307 (2013).
6. Conley, H. J. et al. Bandgap Engineering of Strained Monolayer and Bilayer MoS2. Nano Lett. 13, 3626-3630 (2013).
7. He, K., Poole, C., Mak, K. F. & Shan, J. Experimental Demonstration of Continuous Electronic Structure Tuning via Strain in Atomically Thin MoS2. Nano Lett. 13, 2931-2936 (2013).
8. Feng, J., Qian, X., Huang, C.-W. & Li, J. Strain-engineered artificial atom as a broad-spectrum solar energy funnel. Nat. Photon. 6, 866-872 (2012).
9. Gomes, K. K., Mar, W., Ko, W., Guinea, F. & Manoharan, H. C. Designer Dirac fermions and topological phases in molecular graphene. Nature 483, 306-310 (2012).
10. Polini, M., Guinea, F., Lewenstein, M., Manoharan, H. C. & Pellegrini, V. Artificial honeycomb lattices for electrons, atoms and photons. Nat. Nanotechnol. 8, 625-633 (2013).
11. Mak, K. F., Lee, C., Hone, J., Shan, J. & Heinz, T. F. Atomically thin MoS2: a new direct-gap semiconductor. Phys. Rev. Lett. 105, 136805 (2010).
12. Splendiani, A. et al. Emerging Photoluminescence in Monolayer MoS2. Nano Lett. 10, 1271-1275 (2010).
13. Bernardi, M., Palummo, M. & Grossman, J. C. Extraordinary sunlight absorption and one nanometer thick photovoltaics using two-dimensional monolayer materials. Nano Lett. 13, 3664-3670 (2013).
14. Sundaram, R. S. et al. Electroluminescence in Single Layer MoS2. Nano Lett. 13, 1416-1421 (2013).
15. Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V. & Kis, A. Single-layer MoS2 transistors. Nat. Nanotechnol. 6, 147-150 (2011).
16. Butler, S. Z. et al. Progress, challenges, and opportunities in two-dimensional materials beyond graphene. ACS Nano 7, 2898-2926 (2013).
17. Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N. & Strano, M. S. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat. Nanotechnol. 7, 699-712 (2012).
18. Mak, K. F., McGill, K. L., Park, J. & McEuen, P. L. The valley Hall effect in MoS2 transistors. Science 344, 14891492 (2014).
19. Bertolazzi, S., Brivio, J. & Kis, A. Stretching and breaking of ultrathin MoS2. ACS Nano 5, 9703-9709 (2011).
20. Castellanos-Gomez, A. et al. Elastic properties of freely suspended MoS2 nanosheets. Adv. Mater. 24, 772-775 (2012).
21. Kuykendall, T., Ulrich, P., Aloni, S. & Yang, P. Complete composition tunability of InGaN nanowires using a combinatorial approach. Nat. Mater. 6, 951-956 (2007).
22. Kim, C.-J. et al. On-nanowire band-graded Si:Ge photodetectors. Adv. Mater. 23, 1025-1029 (2011).
23. Castellanos-Gomez, A. et al. Local strain engineering in atomically thin MoS2. Nano Lett. 13, 5361-5366 (2013).
24. Hulteen, J. C. & Van Duyne, R. P. Nanosphere lithography: a materials general fabrication process for periodic particle array surfaces. J. Vac. Sci. Technol. A 13, 1553-1558 (1995).
25. Tomori, H. et al. Introducing nonuniform strain to graphene using dielectric nanopillars. Appl. Phys. Express 4, 075102 (2011).
26. Reserbat-Plantey, A. et al. Strain superlattices and macroscale suspension of graphene induced by corrugated substrates. Nano Lett. 14, 5044-5051 (2014).
27. Lee, C. et al. Anomalous Lattice Vibrations of Single-and Few-Layer MoS2. ACS Nano 4, 2695-2700 (2010).
28. Li, H. et al. From Bulk to Monolayer MoS2: Evolution of Raman Scattering. Adv. Func. Mater. 22, 1385-1390 (2012).
29. Fu, X. et al. Tailoring exciton dynamics by elastic strain-gradient in semiconductors. Adv. Mater. 26, 2572-2579 (2014).
30. Schuller, J. A. et al. Orientation of luminescent excitons in layered nanomaterials. Nat. Nanotechnol. 8, 271-276 (2013).
31. Liu, X. et al. Strong light-matter coupling in two-dimensional atomic crystals. Nat. Photon. 9, 30-34 (2015).
32. Lien, D.-H. et al. Engineering light outcoupling in 2D materials. Nano Lett. 15, 1356-1361 (2015).
33. Nam, D. et al. Strain-induced pseudoheterostructure nanowires confining carriers at room temperature with nanoscale-tunable band profiles. Nano Lett. 13, 3118-3123 (2013).
34. Fu, X. et al. Exciton drift in semiconductors under uniform strain gradients: application to bent ZnO microwires. ACS Nano 8, 3412-3420 (2014).
35. Walia, S. et al. Characterization of metal contacts for two-dimensional MoS2 nanoflakes. Appl. Phys. Lett. 103, 232105 (2013).
36. Ye, Z. et al. Probing excitonic dark states in single-layer tungsten disulphide. Nature 513, 214-248 (2014).