Governing Rule for Dynamic Formation of Grain Boundaries in Grown Graphene

ACS Nano

Volumn 9, Issue 6, 2015, Pages 5792-5798

  Guo, Wei ^a,b   Wu, Bin ^a   Li, Yongtao ^a   Wang, Lifeng ^a   Chen, Jisi ^a   Chen, Bingyan ^c   Zhang, Zhiyong ^c   Peng, Lianmao ^c   Wang, Shuai ^b   Liu, Yunqi ^a  

^a INSTITUTE OF CHEMISTRY   (China)

^b HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^c PEKING UNIVERSITY   (China)

Author keywords

anisotropic etching; chemical vapor deposition; dynamic formation; grain boundaries; graphene

Indexed keywords

ANISOTROPIC ETCHING; CHEMICAL VAPOR DEPOSITION; FIELD EFFECT TRANSISTORS; GRAIN BOUNDARIES; GRAIN GROWTH;

CHEMICAL VAPOR DEPOSITED; END POINTS; GEOMETRIC RULES; GROWTH CONTROL; MISORIENTATION ANGLE;

GRAPHENE;

EID: 84934888210     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/acsnano.5b01827     Document Type: Article

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