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Volumn 91, Issue 23, 2015, Pages

Two-dimensional inversion-asymmetric topological insulators in functionalized III-Bi bilayers

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EID: 84931275370     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.91.235306     Document Type: Article
Times cited : (70)

References (56)
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    • Murakami, S.1
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    • L. Fu and C. L. Kane, Phys. Rev. B 76, 045302 (2007). 10.1103/PhysRevB.76.045302
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    • Fu, L.1    Kane, C.L.2
  • 41
    • 84931285848 scopus 로고    scopus 로고
    • See Supplemental Material at for phonon band dispersion relations calculated for F2-III-Bi thin films, electronic band structures for the zigzag nanoribbons of F2-III-Bi thin films, and the corresponding real-space charge density distributions of the edge states, band structures of Cl2/Br2/I2-III-Bi thin films, and (Equation presented)-field configurations for Cl2/Br2/I2-III-Bi thin films
    • See Supplemental Material at http://link.aps.org/supplemental/10.1103/PhysRevB.91.235306 for phonon band dispersion relations calculated for F2-III-Bi thin films, electronic band structures for the zigzag nanoribbons of F2-III-Bi thin films, and the corresponding real-space charge density distributions of the edge states, band structures of Cl2/Br2/I2-III-Bi thin films, and (Equation presented)-field configurations for Cl2/Br2/I2-III-Bi thin films.
  • 52
    • 0037116098 scopus 로고    scopus 로고
    • S. Q. Wang and H. Q. Ye, Phys. Rev. B 66, 235111 (2002). 10.1103/PhysRevB.66.235111
    • (2002) Phys. Rev. B , vol.66 , pp. 235111
    • Wang, S.Q.1    Ye, H.Q.2
  • 54


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.