First principle modeling of oxygen-doped monolayer graphitic carbon nitride

Materials Chemistry and Physics

Volumn 161, Issue , 2015, Pages 194-200

  Cui, Jie ^a   Liang, Shuhua ^a   Wang, Xianhui ^a   Zhang, Jianmin ^b  

^a XI'AN UNIVERSITY OF TECHNOLOGY   (China)

^b SHAANXI NORMAL UNIVERSITY   (China)

Author keywords

Ab initio calculations; Band structure; Electronic structure; Monolayers

Indexed keywords

BAND STRUCTURE; CALCULATIONS; ELECTRONIC STRUCTURE; GRAPHITIC CARBON NITRIDE; HALL MOBILITY; HOLE MOBILITY; LIGHT ABSORPTION; MONOLAYERS; THERMODYNAMICS;

AB INITIO CALCULATIONS; AB INITIO THERMODYNAMICS; CHARGE DENSITY DIFFERENCE; ELECTRONIC AND GEOMETRIC STRUCTURES; FIRST PRINCIPLE MODELING; INTRINSIC SEMICONDUCTORS; RECOMBINATION CENTERS; VISIBLE LIGHT ABSORPTION;

SEMICONDUCTOR DOPING;

EID: 84930759361     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2015.05.036     Document Type: Article

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