A study of the quantitative relationship of charge-density changes and the design area of a fabricated solar cell

Transactions on Electrical and Electronic Materials

Volumn 12, Issue 5, 2011, Pages 204-208

  Jeon, Kyeong Nam ^a   Kim, Seon Hun ^b   Kim, Hoy Jin ^b   Kim, In Sung ^c   Kim, Sang Hyun ^c  

^a Department of Electronic and Optical Communications Engineering   (South Korea)

^b Kerea Photonics Technology Institute   (South Korea)

^c Department of Research   (South Korea)

Author keywords

Charge density; Doping; Fabricated design area; Gallium arsenide; Impurity; Silicon

Indexed keywords

DESIGN; GALLIUM; GALLIUM ALLOYS; GALLIUM ARSENIDE; IMPURITIES;

FABRICATED DESIGN AREA; MATHCAD PROGRAM; MATHEMATICAL CALCULATIONS; N-TYPE DOPING; P-TYPE IMPURITIES; PARAMETER RANGE;

FABRICATION;

EID: 84930478079     PISSN: 12297607     EISSN: 20927592     Source Type: Journal    
DOI: 10.4313/TEEM.2011.12.5.204     Document Type: Article

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4. J. R. Hook and H. E. Hall, Solid State Physics, 2nd ed. (Wiley, New York,1995).
5. D. A. Neamen, Semiconductor Physics and Devices: Basic Principles, 3rd ed. (McGraw-Hill, Boston, 2003).