Control of Nanostructures and Interfaces of Metal Oxide Semiconductors for Quantum-Dots-Sensitized Solar Cells

Journal of Physical Chemistry Letters

Volumn 6, Issue 10, 2015, Pages 1859-1869

  Tian, Jianjun ^a,b   Cao, Guozhong ^a,c  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^b UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING   (China)

^c UNIVERSITY OF WASHINGTON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONVERSION EFFICIENCY; METALLIC COMPOUNDS; METALS; MOS DEVICES; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; SOLAR CELLS; SURFACE DEFECTS; SURFACE TREATMENT; TRANSISTORS;

CHARGE RECOMBINATIONS; EFFECTIVE APPROACHES; LARGE SPECIFIC SURFACE AREAS; METAL OXIDE SEMICONDUCTOR; NANOSTRUCTURED METALS; POWER CONVERSION EFFICIENCIES; QUANTUM DOTS-SENSITIZED SOLAR CELLS; STRONG SCATTERINGS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 84930209185     PISSN: None     EISSN: 19487185     Source Type: Journal    
DOI: 10.1021/acs.jpclett.5b00301     Document Type: Review

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