Tailoring interfacial oxide for polysilicon bit-cell contacts and emitters with in situ vapor HF interface cleaning and polysilicon deposition in a 4Mbit BiCMOS fast static RAM

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn 1992-October, Issue , 1992, Pages 84-87

  Walczyk, Fred ^a   Lage, Craig ^a   Kaushik, Vidya ^b   Blackwell, Mike ^a  

^a Free Scale Semiconductor   (United States)

^b MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BICMOS TECHNOLOGY; BISMUTH COMPOUNDS; DEPOSITION; POLYCRYSTALLINE MATERIALS; POLYSILICON; TOOLS;

CLUSTER TOOL; CONVENTIONAL PROCESSING; INTERFACIAL OXIDES; POLYSILICON DEPOSITION; POLYSILICON EMITTER; SITU VAPORS; STATIC RAMS; ULTRA-THIN OXIDE;

IN SITU PROCESSING;

EID: 84930094279     PISSN: 10889299     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/BIPOL.1992.274078     Document Type: Conference Paper

References (1)

1. J. Hayden et al., IEEE Trans. Electron Devices, vol. 39, pp 1669-1679, July 1992.