Si-based Ge0.9Sn0.1 photodetector with peak responsivity of 2.85 A/W and longwave cutoff at 2.4 μm

Electronics Letters

Volumn 51, Issue 11, 2015, Pages 854-856

  Pham, T N ^a   Du, W ^a   Conley, B R ^a   Margetis, J ^b   Sun, G ^c   Soref, R A ^c   Tolle, J ^b   Li, B ^d   Yu, S Q ^a  

^a University of Arkansas   (United States)

^b ASM   (United States)

^c UNIVERSITY OF MASSACHUSETTS BOSTON   (United States)

^d Arktonics LLC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; GALLIUM ALLOYS; GALLIUM COMPOUNDS; INDIUM ALLOYS; INFRARED DETECTORS; METALS; MOS DEVICES; OXIDE SEMICONDUCTORS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR ALLOYS; TIN ALLOYS; TUNGSTEN ALLOYS;

COMPLEMENTARY METAL OXIDE SEMICONDUCTOR PROCESS; DEVICE FABRICATIONS; PEAK RESPONSIVITY; PHOTOVOLTAIC DETECTOR; SPECIFIC DETECTIVITY; SPECTRAL RESPONSE; TEMPERATURE DEPENDENT; TEMPERATURE RESPONSIVITY;

SI-GE ALLOYS;

EID: 84929649115     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el.2015.0331     Document Type: Article

References (7)

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2. Ghetmiri, S.A., Du, W., Margetis, J., et al.: 'Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence', Appl. Phys. Lett., 2014, 105, (15), p. 151109, doi: 10.1063/1.4898597
3. Conley, B.R., Margetis, J., Du, W., et al.: ' Si based GeSn photoconduc-tors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff, Appl. Phys. Lett, 2014, 105, (22), p. 221117, doi: 10.1063/1.4903540
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