Improved hole interfacial layer for planar perovskite solar cells with efficiency exceeding 15%

ACS Applied Materials and Interfaces

Volumn 7, Issue 18, 2015, Pages 9645-9651

  Wang, Zhao Kui ^a   Li, Meng ^b   Yuan, Da Xing ^a   Shi, Xiao Bo ^a   Ma, Heng ^b   Liao, Liang Sheng ^a  

^a SOOCHOW UNIVERSITY   (China)

^b HENAN NORMAL UNIVERSITY   (China)

Author keywords

GeO2< inf> nanoparticles; hole interfacial layer; perovskite solar cells; solution processing

Indexed keywords

CONDUCTING POLYMERS; FILM GROWTH; INTERFACES (MATERIALS); PEROVSKITE; SOLAR CELLS; TEMPERATURE;

AQUEOUS DISPERSIONS; CRYSTALLINE FILMS; HIGH CONDUCTIVITY; HOLE TRANSPORT LAYERS; INTERFACE MODIFICATION; INTERFACIAL LAYER; SOLUTION-PROCESSED; SOLUTION-PROCESSING;

COMPOSITE FILMS;

EID: 84929224796     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/acsami.5b01330     Document Type: Article

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