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Journal of Materials Chemistry C

Volumn 3, Issue 19, 2015, Pages 4848-4851

Near room temperature plasma enhanced atomic layer deposition of ruthenium using the RuO4-precursor and H2-plasma

(5) Minjauw, Matthias M a Dendooven, Jolien a Capon, Boris a Schaekers, Marc b Detavernier, Christophe a

a GHENT UNIVERSITY (Belgium)

b IMEC (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

GROWTH RATE; RUTHENIUM;

H2 PLASMA; IMPURITY CONTENT; NEAR ROOM TEMPERATURE; PROCESS PARAMETERS; RU FILM; RU THIN FILMS; SAMPLE TEMPERATURE;

ATOMIC LAYER DEPOSITION;

EID: 84929179599 PISSN: 20507534 EISSN: 20507526 Source Type: Journal
DOI: 10.1039/c5tc00751h Document Type: Article

Times cited : (23)

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