Erratum: Spin transport in nondegenerate si with a Spin MOSFET structure at room temperature (Physical Review Applied (2014) 2 (034005) DOI: 10.1103/PhysRevApplied.2.034005);Spin Transport in Nondegenerate Si with a Spin MOSFET Structure at Room Temperature

Physical Review Applied

Volumn 2, Issue 3, 2014, Pages

  Sasaki, Tomoyuki ^a   Ando, Yuichiro ^b,c   Kameno, Makoto ^b   Tahara, Takayuki ^c   Koike, Hayato ^a   Oikawa, Tohru ^a   Suzuki, Toshio ^d   Shiraishi, Masashi ^b,c  

^a TDK CORPORATION   (Japan)

^b OSAKA UNIVERSITY   (Japan)

^c KYOTO UNIVERSITY   (Japan)

^d Akita Research Institute of Advanced Technology   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER CIRCUITS; ELECTRIC FIELDS; LOGIC DEVICES; METALS; MODULATION; MOS DEVICES; MOSFET DEVICES; OXIDE SEMICONDUCTORS; RECONFIGURABLE HARDWARE; SEMICONDUCTING SILICON; TRANSISTORS;

EXPERIMENTAL DEMONSTRATIONS; MOSFET STRUCTURES; PHYSICAL REVIEW; RECONFIGURABLE LOGIC; SPIN RELAXATION; SPIN TRANSISTOR; SPIN-DIFFUSION LENGTH; SPIN-LOGIC DEVICES;

SPIN DYNAMICS;

EID: 84928919499     PISSN: None     EISSN: 23317019     Source Type: Journal    
DOI: 10.1103/PhysRevApplied.9.039901     Document Type: Erratum

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