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Chemical Physics Letters

Volumn 628, Issue , 2015, Pages 43-48

Electronic properties of TiO2 doped with Sc, Y, La, Zr, Hf, V, Nb and Ta

(8) Pan, J W a Li, C a Zhao, Y F a Liu, R X a Gong, Y Y a Niu, L Y a Liu, X J a,b Chi, B Q a

a CHINA JILIANG UNIVERSITY (China)

b EAST CHINA NORMAL UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; DOPING (ADDITIVES); ELECTRONIC PROPERTIES; ENERGY GAP; LANTHANUM COMPOUNDS; NIOBIUM; SYSTEM STABILITY; THERMODYNAMIC STABILITY; THERMODYNAMICS; TITANIUM DIOXIDE; ZIRCONIUM COMPOUNDS;

DOPANT CONCENTRATIONS; DOPED SYSTEMS; FIRST-PRINCIPLES CALCULATION; MULLIKEN POPULATIONS; SECOND PHASE; TM DOPANT;

YTTRIUM COMPOUNDS;

EID: 84928391006 PISSN: 00092614 EISSN: None Source Type: Journal
DOI: 10.1016/j.cplett.2015.03.056 Document Type: Article

Times cited : (43)

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