In situ photoelectron spectroscopic characterization of c-BN films deposited via plasma enhanced chemical vapor deposition employing fluorine chemistry

Diamond and Related Materials

Volumn 56, Issue , 2015, Pages 13-22

  Shammas, Joseph ^a   Sun, Tianyin ^a   Koeck, Franz A M ^a   Rezikyan, Aram ^a   Nemanich, Robert J ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

Author keywords

Bias growth; Cubic boron nitride (c BN); Electron affinity; Plasma CVD; Surface electronic properties; Work function

Indexed keywords

BORON NITRIDE; CHEMICAL BONDS; CHEMICAL DETECTION; CYCLOTRONS; ELECTRON AFFINITY; ELECTRON CYCLOTRON RESONANCE; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; FLUORINE; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; III-V SEMICONDUCTORS; PHOTOELECTRONS; PHOTONS; PLASMA CVD; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SUBSTRATES; ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY; WORK FUNCTION; X RAY PHOTOELECTRON SPECTROSCOPY;

BIAS GROWTH; CUBIC BORON NITRIDE (CBN); ELECTRON CYCLOTRON RESONANCE MICROWAVE PLASMA; HEXAGONAL BORON NITRIDE (H-BN); RUTHERFORD BACKSCATTERING SPECTROMETRY; SITU X-RAY PHOTOELECTRON SPECTROSCOPY; SPECTROSCOPIC CHARACTERIZATION; SURFACE ELECTRONIC PROPERTIES;

CUBIC BORON NITRIDE;

EID: 84927672059     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2015.04.002     Document Type: Article

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