Ultra-high quantum yield of graphene quantum dots: Aromatic-nitrogen doping and photoluminescence mechanism

Particle and Particle Systems Characterization

Volumn 32, Issue 4, 2015, Pages 434-440

  Sun, Jing ^a   Yang, Siwei ^a   Wang, Zhongyang ^b   Shen, Hao ^b   Xu, Tao ^c   Sun, Litao ^c   Li, Hao ^d   Chen, Wenwen ^e   Jiang, Xingyu ^e   Ding, Guqiao ^a   Kang, Zhenhui ^d   Xie, Xiaoming ^a   Jiang, Mianheng ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b SHANGHAI ADVANCED RESEARCH INSTITUTE   (China)

^c Southeast University   (China)

^d SOOCHOW UNIVERSITY   (China)

^e NATIONAL CENTER FOR NANOSCIENCE AND TECHNOLOGY   (China)

Author keywords

doping; graphene; photoluminescence; quantum dots; quantum yield

Indexed keywords

DOPING (ADDITIVES); GRAPHENE; GRAPHENE QUANTUM DOTS; NANOCRYSTALS; NITROGEN; PHOTOLUMINESCENCE; QUANTUM YIELD;

CONJUGATE STRUCTURES; DOPED NITROGEN; DOPING MECHANISM; GRAPHITIC DOMAINS; IN-SITU DOPING; NITROGEN DOPED GRAPHENE; NITROGEN-DOPING; PHOTOLUMINESCENCE MECHANISM;

SEMICONDUCTOR QUANTUM DOTS;

EID: 84927619816     PISSN: 09340866     EISSN: 15214117     Source Type: Journal    
DOI: 10.1002/ppsc.201400189     Document Type: Article

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