Investigation of Band-Offsets at Monolayer-Multilayer MoS2 Junctions by Scanning Photocurrent Microscopy

Nano Letters

Volumn 15, Issue 4, 2015, Pages 2278-2284

  Howell, Sarah L ^a,b   Jariwala, Deep ^a,b   Wu, Chung Chiang ^a,b   Chen, Kan Sheng ^a   Sangwan, Vinod K ^a,b   Kang, Junmo ^a,b   Marks, Tobin J ^a,b   Hersam, Mark C ^a,b   Lauhon, Lincoln J ^a,b  

^a Northwestern University   (United States)

^b NORTHWESTERN UNIVERSITY   (United States)

Author keywords

dichalcogenides; energy conversion; field effect transistor; gate tunable; heterojunction; MoS2; photothermal; photovoltaic; scanning photocurrent microscopy; SPCM; TMDC; two dimensional

Indexed keywords

BAND STRUCTURE; CARRIER TRANSPORT; ENERGY CONVERSION; FIELD EFFECT TRANSISTORS; FILM PREPARATION; HETEROJUNCTIONS; LAYERED SEMICONDUCTORS; MOLYBDENUM COMPOUNDS; MONOLAYERS; MULTILAYER FILMS; MULTILAYERS; PHOTOCURRENTS; PHOTOVOLTAIC EFFECTS; SCANNING; TWO DIMENSIONAL;

DICHALCOGENIDES; GATE-TUNABLE; MOS2; PHOTO-THERMAL; PHOTOVOLTAIC; SCANNING PHOTOCURRENT MICROSCOPIES; SPCM; TMDC;

SULFUR COMPOUNDS;

EID: 84927130447     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl504311p     Document Type: Article

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