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Volumn 15, Issue 4, 2015, Pages 2657-2661

Crystal Field Effect Induced Topological Crystalline Insulators in Monolayer IV-VI Semiconductors

Author keywords

Atomically thin materials; Crystal field effect; IV VI semiconductors; Topological crystalline insulators

Indexed keywords

CALCULATIONS; CRYSTALLINE MATERIALS; ENERGY GAP; GERMANIUM; LEAD; MONOLAYERS; SEMICONDUCTING SELENIUM COMPOUNDS; TIN;

EID: 84926620998     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/acs.nanolett.5b00308     Document Type: Review
Times cited : (144)

References (57)
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    • note
    • Topological invariant is still well-defined for semimetals although the fundamental gap is negative. It is because all direct gaps are nonzero in the whole Brillouin zone, separating the bands into the lower manifold and the higher manifold. Therefore, all the states in the lower bands form a closed manifold and allow us to define the corresponding mirror Chern number. From this sense and for the sake of the simplicity, we still name them as TCIs.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.