Physical characterization of Cu2ZnGeSe4thin films from annealing of Cu-Zn-Ge precursor layers

Thin Solid Films

Volumn 582, Issue , 2015, Pages 171-175

  Buffiere M ^a,b   Elanzeery, H ^a,c,d   Oueslati, S ^a,c,e   Ben Messaoud, K ^a,c,e   Brammertz, G ^f,g   Meuris, M ^f,g   Poortmans, J ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c KING ABDULAZIZ CITY FOR SCIENCE AND TECHNOLOGY   (Saudi Arabia)

^d Nile University   (Egypt)

^e FACULTÉ DES SCIENCES DE TUNIS   (Tunisia)

^f HASSELT UNIVERSITY   (Belgium)

^g HASSELT UNIVERSITY   (Belgium)

Author keywords

Cu2ZnGeSe4; Thin film solar cells; Wide band gap

Indexed keywords

ANNEALING; COPPER COMPOUNDS; DEPOSITION; ENERGY GAP; II-VI SEMICONDUCTORS; LIME; MORPHOLOGY; SELENIUM COMPOUNDS; SUBSTRATES; THIN FILM DEVICES; THIN FILM SOLAR CELLS; THIN FILMS; WIDE BAND GAP SEMICONDUCTORS; ZINC SELENIDE;

ANNEALING CONDITION; ANNEALING TEMPERATURES; CU2ZNGESE4; INITIAL COMPOSITION; PHYSICAL CHARACTERIZATION; SEQUENTIAL DEPOSITION; SODA LIME GLASS SUBSTRATE; WIDE BAND GAP;

GERMANIUM COMPOUNDS;

EID: 84926520398     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2014.09.024     Document Type: Conference Paper

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