Impact of annealing treatment before buffer layer deposition on Cu2ZnSn(S,Se)4solar cells

Thin Solid Films

Volumn 582, Issue , 2015, Pages 151-153

  Hironiwa, Daisuke ^a   Sakai, Noriyuki ^b   Kato, Takuya ^b   Sugimoto, Hiroki ^b   Tang, Zeguo ^a   Chantana, Jakapan ^a   Minemoto, Takashi ^a  

^a RITSUMEIKAN UNIVERSITY   (Japan)

^b Solar Frontier KK   (Japan)

Author keywords

Annealing treatment; Carrier density; Cu2ZnSn(S,Se)4; Hole mobility; Photoluminescence; Solar cells

Indexed keywords

BUFFER LAYERS; CAPACITANCE; CARRIER CONCENTRATION; DEPOSITION; HALL MOBILITY; HOLE MOBILITY; OPEN CIRCUIT VOLTAGE; PHOTOLUMINESCENCE; SOLAR CELLS; SOLAR POWER GENERATION;

ANNEALING TREATMENTS; BUFFER LAYER DEPOSITION; CU2ZNSN(S,SE)4; HALL EFFECT MEASUREMENT; LINEAR RELATIONSHIPS; NON-RADIATIVE RECOMBINATIONS; PHOTOLUMINESCENCE MEASUREMENTS; PHOTOVOLTAIC PERFORMANCE;

ANNEALING;

EID: 84926443209     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2014.11.016     Document Type: Conference Paper

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