Erratum: Electron Doping in Bottom-Up Engineered Thermoelectric Nanomaterials through HCl-Mediated Ligand Displacement (Journal of the American Chemical Society (2015) 137 (4046-4049) DOI:10.1021/jacs.5b00091);Electron doping in bottom-up engineered thermoelectric nanomaterials through HCl-mediated ligand displacement

Journal of the American Chemical Society

Volumn 137, Issue 12, 2015, Pages 4046-4049

  Ibáñez, Maria ^a   Korkosz, Rachel J ^b   Luo, Zhishan ^a   Riba, Pau ^a   Cadavid, Doris ^a   Ortega, Silvia ^a   Cabot, Andreu ^a,c   Kanatzidis, Mercouri G ^b  

^a CATALONIA INSTITUTE FOR ENERGY RESEARCH IREC   (Spain)

^b NORTHWESTERN UNIVERSITY   (United States)

^c INSTITUCIÓ CATALANA DE RECERCA I ESTUDIS AVANÇATS ICREA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; IONS; IV-VI SEMICONDUCTORS; LIGANDS; NANOCRYSTALS; NANOSTRUCTURED MATERIALS; THERMOELECTRIC EQUIPMENT;

BUILDING BLOCKES; COLLOIDAL NANOPARTICLES; CONTROL CHARGE TRANSPORT; ELECTRON-DOPING; LIGAND DISPLACEMENT; NANO-CRYSTALLINE PBS; THERMOELECTRIC FIGURE OF MERIT; THERMOELECTRIC PROPERTIES;

DOPING (ADDITIVES);

CARBOXYLIC ACID; CHLORIDE ION; HALIDE; ION; LIGAND; NANOMATERIAL;

ARTICLE; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; ELECTRON; LOW TEMPERATURE; MOLECULAR ELECTRONICS; NANOENGINEERING; RELATIVE DENSITY; STOICHIOMETRY; THERMAL CONDUCTIVITY; THERMOGRAVIMETRY;

EID: 84926319618     PISSN: 00027863     EISSN: 15205126     Source Type: Journal    
DOI: 10.1021/jacs.5b08296     Document Type: Erratum

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