Linear magnetoresistance caused by mobility fluctuations in n -doped Cd3As2

Physical Review Letters

Volumn 114, Issue 11, 2015, Pages

  Narayanan, A ^a   Watson, M D ^a   Blake, S F ^a   Bruyant, N ^b   Drigo, L ^b   Chen, Y L ^a   Prabhakaran, D ^a   Yan, B ^c   Felser, C ^b   Kong, T ^d,e   Canfield, P C ^d,e   Coldea, A I ^a  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b GRENOBLE HIGH MAGNETIC FIELD LABORATORY   (France)

^c MAX PLANCK INSTITUTE FOR CHEMICAL PHYSICS OF SOLIDS   (Germany)

^d IOWA STATE UNIVERSITY   (United States)

^e IOWA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); FERMI SURFACE; MAGNETORESISTANCE; PHASE SHIFT; PHASE SHIFTERS;

DISORDER EFFECT; LINEAR MAGNETORESISTANCE; MOBILITY FLUCTUATIONS; OSCILLATION MEASUREMENTS; QUANTUM OSCILLATIONS; STRUCTURE PREDICTION; SURFACE CHANGES; ZEEMAN SPIN SPLITTING;

TUNNELLING MAGNETORESISTANCE;

EID: 84925870945     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.114.117201     Document Type: Article

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