Effect of the Si/TiO2/BiVO4 Heterojunction on the Onset Potential of Photocurrents for Solar Water Oxidation

ACS Applied Materials and Interfaces

Volumn 7, Issue 10, 2015, Pages 5788-5796

  Jung, Hyejin ^a,b   Chae, Sang Youn ^a,c   Shin, Changhwan ^d   Min, Byoung Koun ^a,b   Joo, Oh Shim ^a   Hwang, Yun Jeong ^a,b  

^a Korea Institute of Science and Technology   (South Korea)

^b University of Science and Technology (UST)   (South Korea)

^c Korea University   (South Korea)

^d University of Seoul   (South Korea)

Author keywords

BiVO4; dual absorber; heterojunction; onset potential; Si; TiO2

Indexed keywords

EFFICIENCY; HETEROJUNCTIONS; METALS; MOS DEVICES; OXIDE MINERALS; OXIDE SEMICONDUCTORS; PHOTOCURRENTS; SILICON; TITANIUM DIOXIDE;

BIVO4; CONDUCTION BAND EDGE; DUAL ABSORBER; METAL OXIDE SEMICONDUCTOR; ONSET POTENTIAL; PHOTOCURRENT DENSITY; REVERSIBLE HYDROGEN ELECTRODES; TIO2;

BISMUTH COMPOUNDS;

EID: 84925357456     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am5086484     Document Type: Article

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