Large area p-type PERL cells featuring local p+ BSF formed by laser processing of ALD Al2O3 layers

Solar Energy Materials and Solar Cells

Volumn 138, Issue , 2015, Pages 72-79

  Cornagliotti, E ^a   Uruena, A ^a   Hallam, B ^b,c   Tous, L ^a   Russell, R ^a   Duerinckx, F ^a   Szlufcik, J ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF NEW SOUTH WALES   (Australia)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Aluminum oxide; Cu plating; Laser doping; PERL; Spatial ALD

Indexed keywords

ATOM LASERS; ATOMIC LAYER DEPOSITION; COPPER PLATING; SEMICONDUCTOR DOPING; SILICON; SILICON NITRIDE; SILICON SOLAR CELLS; SOLAR CELLS; TEMPERATURE;

ALUMINUM OXIDES; CU PLATINGS; LASER DOPING; PERL; SPATIAL ALD;

ALUMINUM;

EID: 84925134195     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2015.02.034     Document Type: Article

References (54)

1. G. Agostinelli, A. Delabie, P. Vitanov, Z. Alexieva, H.F.W. Dekkers, S. De Wolf, and G. Beaucarne Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge Sol. Energy Mater. Sol. Cells 90 2006 3438 3443
2. 3 J. Appl. Phys. 104 2008 044903
3. G. Dingemans Nanolayer Surface Passivation Schemes for Silicon Solar Cells (Ph.D. thesis) 2011 University of Tilburg
4. 3 rear surface passivation of industrial p-type Si PERC above 19% Prog. Photovolt.: Res. Appl. 20 2012 269 273
5. 3 Prog. Photovolt.: Res. Appl. 16 6 2008 461 466
6. P. Saint-Cast, J. Benick, D. Kania, L. Weiss, M. Hofmann, J. Rentsch, R. Preu, and S.W. Glunz Very low surface recombination velocity on p-type c-Si by high-rate plasma-deposited aluminum oxide Appl. Phys. Lett. 95 2009 151502
7. y layer stacks for applications in high-efficiency industrial-type silicon solar cells Sol. Energy Mater. Sol. Cells 112 2013 196
8. 3 Appl. Phys. Lett. 100 2012 202107
9. 3 layers for the rear surface passivation of C-Si solar cells Energy Procedia 27 2012 379 384
10. P. Poodt, A. Lankhorst, F. Roozeboom, K. Spee, D. Maas, and A. Vermeer High-speed spatial atomic-layer deposition of aluminum oxide layers for solar cell passivation Adv. Mater. 22 32 2010 3564 3567
11. 3, a new option for high throughput Si solar cell passivation Prog. Photovolt.: Res. Appl. 19 2011 733 739
12. C.W. White, W.H. Christie, B.R. Appleton, S.R. Wilson, P.P. Pronko, and C.W. Magee Redistribution of dopants in ion-implanted silicon by pulsed-laser annealing Appl. Phys. Lett. 33 1978 662
13. G. Stock, D. Bollman, R. Buchner, G. Neumayer, and K. Haberger Ultra-flat p-n junctions formed by solid source laser doping Appl. Surf. Sci. 46 1-4 1990 348 351
14. D. Kray, M. Aleman, A. Fell, S. Hopman, K. Mayer, M. Mesec, R. Muller, G.P. Willeke, S.W. Glunz, B. Bitnar, D.H. Neuhaus, R. Ludemann, T. Schlenker, D. Manz, A.Bentzen, E. Sauar, A. Pauchard, B. Richerzhagen, Laser-doped silicon solar cells by laser chemical processing (LCP) exceeding 20% efficiency, in: Proceedings of the 33rd IEEE Photovoltaic Specialists Conference, 2008, pp. 1-3.
15. S.R. Wenham, M.A. Green, Self Aligning Method for Forming A Selective Emitter and Metallization in a Solar Cell, US Patent 6429039, 2002.
16. 3 for silicon surface passivation, in: Proceedings of the 37th IEEE Photovoltaic Specialists Conference (PVSC), 2012, pp. 001049-001054.
17. 3, in: Proceedings of the 37th IEEE Photovoltaic Specialists Conference (PVSC), 2011, 2011
18. x-stacks at increased temperatures: avoiding blistering during contact firing Energy Procedia 27 2012 426 431
19. x for the passivation of lowly- and highly-doped p-type silicon surfaces, in: Proceedings of the 27th European Photovoltaic Solar Energy Conference and Exhibition, 2012, pp. 1133-1137.
20. A. Uruena, L. Tous, F. Duerinckx, I. Kuzma-Filipek, E. Cornagliotti, J. John, R. Mertens, and J. Poortmans Understanding the mechanisms of rear reflectance losses in PERC type silicon solar cells Energy Procedia 38 2013 801 806
21. E. Schneiderlöchner, R. Preu, R. Lüdemann, and S.W. Glunz Laser-fired rear contacts for crystalline silicon solar cells Prog. Photovolt.: Res. Appl. 10 1 2002 29 34
22. 3/a-SiCx:H stacks: a feasible solution for the rear surface of high-efficiency p-type c-Si solar cells Prog. Photovolt.: Res. Appl. 21 5 2013 1171 1175
23. 3/SiN passivation Phys. Status Solidi A 210 9 2013 1871 1873
24. 3 layers, in: Proceedings of the 27th European Photovoltaic Solar Energy Conference and Exhibition, 2012, pp. 706-708.
25. x passivation dielectrics on P-Type Cz silicon solar cells, in: Proceedings of the 28th European Photovoltaic Solar Energy Conference and Exhibition, 2013, pp. 1989-1993.
26. K. Tang, E.J. Øvrelid, G. Tranell, and M. Tangstad Thermochemical and kinetic databases for the solar cell silicon materials Cryst. Growth Si Sol. Cells 14 2009 219 251
27. A. Herguth, and G. Hahn Kinetics of the boron-oxygen related defect in theory and experiment J. Appl. Phys. 108 2010 114509
28. H. Fischer, W. Pschunder, Investigation of photon and thermal induced changes in silicon solar cells, in: Proceedings of the 10th Photovoltaic Specialists Conference, 1974, pp. 404-411.
29. Z. Hameiri, T. Puzzer, L. Mai, L.B. Sproul, and S.R. Wenham Laser induced defects in laser doped solar cells Prog. Photovolt.: Res. Appl. 19 4 2011 391 405
30. 3 J. Appl. Phys. 104 2008 113703
31. E. Cornagliotti, L. Tous, A. Uruena, A. Rothschild, R. Russell, V. Lu, S. Radosavljevic, J. John, J. Toman, M. Aleman, F. Duerinckx, J. Poortmans, J. Szlufcik, B. Dielissen, F.M.M. Souren, X. Gay, R. Gortzen, B. Hallam, Integration of spatial ALD aluminum oxide for rear side passivation of p-Type PERC/PERL solar cells, in: Proceedings of the 28th European Photovoltaic Solar Energy Conference and Exhibition, 2013, pp. 976-981.
32. A.M. Wenham, Z. Hameri, J. Jia Ji, L. Mai, Z. Shi, B. Thahjono, S.R. Wenham, Photovoltaic Device Structure and Method, Patent WO2010091466 A1, 2010.
33. B. Hallam, C. Chan, A. Sugianto, and S. Wenham Deep junction laser doping for contacting buried layers in silicon solar cells Sol. Energy Mater. Sol. Cells 113 2013 124 134
34. L. Pirozzi, G. Arabito, F. Artuso, V. Barbarossa, U. Besi-Vetrella, S. Loreti, P. Mangiapane, and E. Salza Selective emitters in buried contact silicon solar cells: some low cost solutions Sol. Energy Mater. Sol. Cells 65 2001 287 295
35. A. Safiei, R. Derix, S. Suckow, H. Koch, U. Breuer, T.M. Pletzer, K. Wolter, and H. Kurz Generation of defect-related acceptor states by laserdoping Sol. Energy Mater. Sol. Cells 106 2012 2 6
36. B. Hallam, A. Uruena, R. Russell, M. Aleman, M. Abbott, C. Dang, S. Wenham, L. Tous, and J. Poortmans Efficiency enhancement of i-PERC solar cells by implementation of a laser doped selective emitter Sol. Energy Mater. Sol. Cells 134 2015 89 98
37. R.A. Sinton, A. Cuevas, M. Stuckings, Quasi-steady-state photoconductance, a new method for solar cell material and device characterization, in: Proceedings of the 25th IEEE Photovoltaic Specialists Conference, 1996, pp. 457-460.
38. A. Cacciato, F. Duerinckx, K. Baert, M. Moors, T. Caremans, G. Leys, K. De Keersmaecker, and J. Szlufcik Investigating manufacturing options for industrial PERL-type Si solar cells Sol. Energy Mater. Sol. Cells 113 2013 153 159
39. L. Tous, R. Russell, J. Beckers, J. Bertens, E. Cornagliotti, P. Choulat, J. John, F. Duerinckx, J. Szlufcik, J. Poortmans, R. Mertens, A simple copper based plating process resulting in high cell efficiencies and reliable modules using pilot processing equipment, in: Proceedings of the 28th European Photovoltaic Solar Energy Conference and Exhibition, 2013, pp. 1008-1012.
40. R. Russell, L. Tous, H. Philipsen, J. Horzel, E. Cornagliotti, M. Ngamo, P. Choulat,R. Labie, J. Beckers, J. Bertens, M. Fuji, J. John, J. Poortmans, R. Mertens, A simple copper metallisation process for high cell efficiencies and reliable modules, in: Proceedings of the 28th European Photovoltaic Solar Energy Conference and Exhibition, 2012, pp. 538-543.
41. B.J. Hallam High Efficiency Laser-Doped Silicon Solar Cells with Advanced Hydrogenation (Ph.D. thesis) 2015 University of New South Wales
42. Y.W. Wong, X.Q. Yang, P.W. Chan, and K.Y. Tong Excimer-laser doping of spin-on dopant in silicon Appl. Surf. Sci. 64 3 1993 259 263
43. D.W. Fischer, and J.J. Rome Additional structure in infrared excitation spectra of group-III acceptors in silicon Phys. Rev. B - Condens. Matter Mater. Phys. 27 1983 4826
44. F. Huster, G. Schubert, ECV doping profile measurements of aluminium alloyed back surface fields, in: Proceedings of the 20th European Photovoltaic Solar Energy Conference and Exhibition, 2005.
45. M. Rauer, M. Rudiger, C. Schmiga, H. Strutzberg, M. Bahr, M. Glatthaar, and S.W. Glunz Incomplete ionization of aluminum in silicon and its effect on accurate determination of doping profile J. Appl. Phys. 114 20 2013 203702
46. J. Bovatsek, A. Sugianto, B. Hallam, B. Tjahjono, S. Wenham, R. Patel, High-speed fabrication of laser doping selective emitter solar cells using 532 nm continuous wave (CW) and modelocked quasi-CW laser sources, in: Proceedings of the 26th European Photovoltaic Solar Energy Conference, 2011, pp. 895-900.
47. S. Bowden, A. Rohatgi, Rapid and accurate determination of series resistance and fill factor losses in industrial silicon solar cells, in: Proceedings of the 17th European Photovoltaic Solar Energy Conference and Exibition, 2001.
48. A. Uruena, J. Horzel, J. John, E. Cornagliotti, P. Eyben, M. Pfeiffer, W. Vandervorst, J. Poortmans, and R. Mertens Interaction between Al-Si melt and dielectric layers during formation of local Al-alloyed contacts for rear-passivated Si solar cells Phys. Status Solidi A 209 12 2012 2615 2619
49. Z.C. Holman, M. Filipic, B. Lipovsek, S. De Wolf, F. Smole, M. Topic, and C. Ballif Parasitic absorption in the rear reflector of a silicon solar cell: simulation and measurement of the sub-bandgap reflectance for common dielectric/metal reflectors Sol. Energy Mater. Sol. Cells 120 A 2014 426 430
50. P.A. Basore, Extended spectral analysis of internal quantum efficiency, in: Proceedings of the 23rd IEEE Photovoltaic Specialists Conference, 1993, pp. 147-152.
51. E. Cornagliotti, A. Uruena, J. Horzel, J. John, L. Tous, D. Hendrickx, V. Prajapati, S. Singh, R. Hoyer, F. Delahaye, K. Weise, D. Queisser, H. Nussbaumer, J. Poortmans, How much rear side polishing is required? a study on the impact of rear side polishing in PERC solar cells, in: Proceedings of the 27th European Photovoltaic Solar Energy Conference and Exhibition, 2012, pp. 561-566.
52. S.S. Cohen, G. Gildenblat, M. Ghezzo, and D.M. Brown Al-0.9% Si/Si Ohmic contacts to shallow junctions J. Electrochem. Soc. 129 6 1982 1335 1338
53. J. Del Alamo, J. Eguren, and A. Luque Operating limits of Al-alloyed high-low junctions for BSF solar cells Solid-State Electron. 24 1981 415 420
54. D.K. Schroder, and D.L. Meier Solar cell contact resistance - a review IEEE Trans. Electron. Devices 31 5 1984 637 647