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Volumn 34, Issue , 2015, Pages 250-259

A first principles study of electronic and optical properties of the polar quaternary chalcogenides β-A2Hg3Ge2S8(A=K and Rb)

Author keywords

Electronic structure; FPLAPW; Optical properties; Semiconductor

Indexed keywords

BAND STRUCTURE; CALCULATIONS; CHARGE DENSITY; ELECTRONIC DENSITY OF STATES; ELECTRONIC STRUCTURE; ENERGY DISSIPATION; ENERGY GAP; GERMANIUM; INORGANIC COMPOUNDS; OPTOELECTRONIC DEVICES; REFRACTIVE INDEX; RUBIDIUM; SEMICONDUCTOR MATERIALS; STRUCTURAL PROPERTIES;

EID: 84924050815     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2015.02.042     Document Type: Article
Times cited : (15)

References (20)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.