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Volumn 34, Issue , 2015, Pages 250-259
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A first principles study of electronic and optical properties of the polar quaternary chalcogenides β-A2Hg3Ge2S8(A=K and Rb)
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Author keywords
Electronic structure; FPLAPW; Optical properties; Semiconductor
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Indexed keywords
BAND STRUCTURE;
CALCULATIONS;
CHARGE DENSITY;
ELECTRONIC DENSITY OF STATES;
ELECTRONIC STRUCTURE;
ENERGY DISSIPATION;
ENERGY GAP;
GERMANIUM;
INORGANIC COMPOUNDS;
OPTOELECTRONIC DEVICES;
REFRACTIVE INDEX;
RUBIDIUM;
SEMICONDUCTOR MATERIALS;
STRUCTURAL PROPERTIES;
BAND STRUCTURE CALCULATION;
DIELECTRIC FUNCTION SPECTRA;
ELECTRONIC AND OPTICAL PROPERTIES;
ELECTRONIC CHARGE DENSITY;
FIRST-PRINCIPLES CALCULATION;
FP-LAPW;
FULL POTENTIAL LINEAR AUGMENTED PLANE WAVES;
FUNDAMENTAL CHARACTERISTICS;
OPTICAL PROPERTIES;
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EID: 84924050815
PISSN: 13698001
EISSN: None
Source Type: Journal
DOI: 10.1016/j.mssp.2015.02.042 Document Type: Article |
Times cited : (15)
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References (20)
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