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Journal of Applied Physics

Volumn 117, Issue 4, 2015, Pages

Resistive switching and synaptic properties of fully atomic layer deposition grown TiN/HfO2/TiN devices

(4) Matveyev, Yu a,b Egorov, K a Markeev, A a Zenkevich, A a,b

a MOSCOW INSTITUTE OF PHYSICS AND TECHNOLOGY (Russian Federation)

b NATIONAL RESEARCH NUCLEAR UNIVERSITY MEPHI (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; ELECTRONIC TIMING DEVICES; HAFNIUM OXIDES; HARDWARE; INTERFACE STATES; NEURAL NETWORKS; OXYGEN VACANCIES; SWITCHING SYSTEMS; TITANIUM COMPOUNDS; TITANIUM NITRIDE;

CONDUCTION STATE; LONG-TERM POTENTIATIONS; NEUROMORPHIC; NEUROMORPHIC HARDWARES; NOVEL NEURAL NETWORK; RESISTIVE SWITCHING; SPIKE TIMING DEPENDENT PLASTICITIES; TRAP ASSISTED TUNNELING;

ATOMIC LAYER DEPOSITION;

EID: 84923668391 PISSN: 00218979 EISSN: 10897550 Source Type: Journal
DOI: 10.1063/1.4905792 Document Type: Article

Times cited : (83)

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