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Volumn 8, Issue 2, 2015, Pages 021102-

Low In solubility and band offsets in the small-x β-Ga2O3/(Ga1-xInx)2O3 system

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; GALLIUM COMPOUNDS; INDIUM ALLOYS; SOLUBILITY;

EID: 84922387437     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.7567/APEX.8.021102     Document Type: Article
Times cited : (21)

References (14)
  • 8
    • 4043129623 scopus 로고    scopus 로고
    • The formation energy of a diluted defect is calculated at the equilibrium volume of the perfect crystal. See Oxford University Press, Oxford, U.K.
    • The formation energy of a diluted defect is calculated at the equilibrium volume of the perfect crystal. See M. Finnis, Interatomic Forces in Condensed Matter (Oxford University Press, Oxford, U.K., 2004) p. 156.
    • (2004) Interatomic Forces in Condensed Matter , pp. 156
    • Finnis, M.1
  • 10
    • 0001689993 scopus 로고    scopus 로고
    • For cases with interface monopoles (absent in the present superlattice orientation) see
    • For cases with interface monopoles (absent in the present superlattice orientation) see F. Bernardini and V. Fiorentini, Phys. Rev. B 57, R9427 (1998).
    • (1998) Phys. Rev. B , vol.57 , pp. R9427
    • Bernardini, F.1    Fiorentini, V.2
  • 12
    • 84922389204 scopus 로고    scopus 로고
    • F. Ricci, F. Boschi, A. Baraldi, M. Higashiwaki, A. Kuramata, A. Filippetti, V. Fiorentini, and R. Fornari, to be published
    • F. Ricci, F. Boschi, A. Baraldi, M. Higashiwaki, A. Kuramata, A. Filippetti, V. Fiorentini, and R. Fornari, to be published.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.