Interface ferroelectric transition near the gap-opening temperature in a single-unit-cell FeSe film grown on Nb-doped SrTiO3 substrate

Physical Review Letters

Volumn 114, Issue 3, 2015, Pages

  Cui, Y T ^a   Moore, R G ^a   Zhang, A M ^b   Tian, Y ^b   Lee, J J ^a   Schmitt, F T ^a   Zhang, W H ^c   Li, W ^a   Yi, M ^a   Liu, Z K ^a   Hashimoto, M ^d   Zhang, Y ^d,e   Lu, D H ^d   Devereaux, T P ^a   Wang, L L ^c,f   Ma, X C ^c,f   Zhang, Q M ^b   Xue, Q K ^c,f   Lee, D H ^e,g   Shen, Z X ^a  

^a SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

^b RENMIN UNIVERSITY OF CHINA   (China)

^c TSINGHUA UNIVERSITY   (China)

^d SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

^e LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^f University of California at Berkeley ^*  (China)

^g UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FERROELECTRICITY; INDUCTANCE; STRONTIUM TITANATES;

COOPER PAIRING; FERROELECTRIC TRANSITION; FILM SUBSTRATES; GAP OPENING; MUTUAL INDUCTANCE; NB-DOPED SRTIO3; RAMAN SPECTROSCOPY MEASUREMENTS; THIN LAYERS;

INTERFACES (MATERIALS);

EID: 84921475722     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.114.037002     Document Type: Article

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