Single-layer MoS2 electronics

Accounts of Chemical Research

Volumn 48, Issue 1, 2015, Pages 100-110

  Lembke, Dominik ^a   Bertolazzi, Simone ^a   Kis, Andras ^a  

^a EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84921419584     PISSN: 00014842     EISSN: 15204898     Source Type: Journal    
DOI: 10.1021/ar500274q     Document Type: Article

References (48)

1. Schwierz, F. Graphene transistors. Nat. Nanotechnol. 2010, 5, 487-496.
2. Colinge, J.-P. Multiple-gate SOI MOSFETs. Solid-State Electron. 2004, 48, 897-905.
3. Wang, Q. H.; Kalantar-Zadeh, K.; Kis, A.; Coleman, J. N.; Strano, M. S. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat. Nanotechnol. 2012, 7, 699-712.
4. Frindt, R. F.; Yoffe, A. D. Physical properties of layer structures: Optical properties and photoconductivity of thin crystals of molybdenum disulphide. Proc. R. Soc. London, Ser. A 1963, 273, 69-83.
5. Fivaz, R.; Mooser, E. Mobility of charge carriers in semiconducting layer structures. Phys. Rev. 1967, 163, 743-755.
6. Podzorov, V.; Gershenson, M. E.; Kloc, C.; Zeis, R.; Bucher, E. High-mobility field-effect transistors based on transition metal dichalcogenides. Appl. Phys. Lett. 2004, 84, 3301-3303.
7. Novoselov, K. S.; Jiang, D.; Schedin, F.; Booth, T. J.; Khotkevich, V. V.; Morozov, S. V.; Geim, A. K. Two-dimensional atomic crystals. Proc. Natl. Acad. Sci. U.S.A. 2005, 102, 10451-10453.
8. 2 transistors. Nat. Nanotechnol. 2011, 6, 147-197.
9. 2. Nat. Mater. 2013, 12, 815-820.
10. 2 from first principles. Phys. Rev. B 2012, 85, 115317.
11. 2. Phys. Rev. B 2013, 88, 165316.
12. 2 transistors. ACS Nano 2012, 6, 10070-10075.
13. 2. ACS Nano 2011, 5, 9934-9938.
14. Ataca, C.; Şahin, H.; Ciraci, S. Stable, single-layer MX2 transition-metal oxides and dichalcogenides in a honeycomb-like structure. J. Phys. Chem. C 2012, 116, 8983-8999.
15. 2. ACS Nano 2011, 5, 9703-9709.
16. 2 transistors operating at gigahertz frequencies. Nano Lett. 2014, 14, 5905-5911.
17. 2. Appl. Phys. Lett. 2012, 101, No. 043103.
18. 2/graphene heterostructures. ACS Nano 2013, 7, 3246-3252.
19. 2. Nano Lett. 2010, 10, 1271-1275.
20. 2: A new direct-gap semiconductor. Phys. Rev. Lett. 2010, 105, No. 136805.
21. 2 phototransistors. ACS Nano 2011, 6, 74-80.
22. 2 nanosheet phototransistors with thickness-modulated optical energy gap. Nano Lett. 2012, 12, 3695-3700.
23. 2 phototransistors with spectral response from ultraviolet to infrared. Adv. Mater. 2012, 24, 5832-5836.
24. 2. Nat. Nanotechnol. 2013, 8, 497-501.
25. 2. Nano Lett. 2013, 13, 1416-1421.
26. Lopez-Sanchez, O.; Llado, E. A.; Koman, V.; Morral, A. F. I.; Radenovic, A.; Kis, A. Light generation and harvesting in a van der Waals heterostructure. ACS Nano 2014, 8, 3042-3048.
27. 2 nanosheets. Adv. Mater. 2012, 24, 772-775.
28. 2 - an atomistic simulation. 2D Mater. 2014, 1, 011007.
29. 2. Phys. Rev. B 2012, 85, 235407.
30. 2 mechanical resonators. Adv. Mater. 2013, 25, 6719-6723.
31. 2 field-effect transistors on hexagonal boron nitride-graphene heterostructures. ACS Nano 2013, 7, 7931-7936.
32. Yan, R.; Simpson, J. R.; Bertolazzi, S.; Brivio, J.; Watson, M.; Wu, X.; Kis, A.; Luo, T.; Hight Walker, A. R.; Xing, H. G. Thermal conductivity of monolayer molybdenum disulfide obtained from temperature-dependent Raman spectroscopy. ACS Nano 2014, 8, 986-993.
33. 2. Nano Lett. 2013, 13, 358-363.
34. 2. Phys. Chem. Chem. Phys. 2014, 16, 10866-10874.
35. 2 monolayers: An ab initio study. Phys. Rev. B 2013, 88, 075420.
36. 2 by benzyl viologen. J. Am. Chem. Soc. 2014, 136, 7853-7856.
37. 2 transistors. Nat. Mater. 2014, 13, 1128-1134.
38. 2 by atomic layer deposition: Adsorption mechanisms and thickness scalability. ACS Nano 2013, 7, 10354-10361.
39. 2 from first principles. Phys. Rev. B 2013, 87, 235312.
40. Geim, A. K.; Grigorieva, I. V. Van der Waals heterostructures. Nature 2013, 499, 419-425.
41. van der Zande, A. M.; Huang, P. Y.; Chenet, D. A.; Berkelbach, T. C.; You, Y.; Lee, G.-H.; Heinz, T. F.; Reichman, D. R.; Muller, D. A.; Hone, J. C. Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide. Nat. Mater. 2013, 12, 554-561.
42. Schwierz, F. Nanoelectronics: Flat transistors get off the ground. Nat. Nanotechnol. 2011, 6, 135-136.
43. The International Technology Roadmap for Semiconductors. 2009, http://www.itrs.net/links/2009itrs/home2009.htm.
44. Novoselov, K. S.; Falko, V. I.; Colombo, L.; Gellert, P. R.; Schwab, M. G.; Kim, K. A roadmap for graphene. Nature 2012, 490, 192-200.
45. Li, L.; Yu, Y.; Ye, G. J.; Ge, Q.; Ou, X.; Wu, H.; Feng, D.; Chen, X. H.; Zhang, Y. Black phosphorus field-effect transistors. Nat. Nano 2014, 9, 372-377.
46. Kang, S. J.; Kocabas, C.; Ozel, T.; Shim, M.; Pimparkar, N.; Alam, M. A.; Rotkin, S. V.; Rogers, J. A. High-performance electronics using dense, perfectly aligned arrays of single-walled carbon nanotubes. Nat. Nano 2007, 2, 230-236.
47. Facchetti, A. Semiconductors for organic transistors. Mater. Today 2007, 10, 28-37.
48. S. M..Sze; Ng, K. K. Physics of Semiconductor Devices, 3rd ed.; Wiley-Interscience: Hoboken, NJ, 1978.