SCOPUS 정보 검색 플랫폼

Materials Science in Semiconductor Processing

Volumn 31, Issue , 2015, Pages 618-623

Structural, electronic and optical features of molybdenum-doped bismuth vanadium oxide

(5) Merupo, V I a,b Velumani, S a Oza, G a Makowska Janusik, M c Kassiba, A b

a DEPARTAMENTO DE FÍSICA (Mexico)

b UNIVERSITÉ DU MAINE (France)

c JAN DLUGOSZ UNIVERSITY (Poland)

Author keywords

BiVO4; EPR; Molybdenum doping; Raman; Sol gel

Indexed keywords

BISMUTH; ENERGY GAP; MOLYBDENUM; OXIDES; PARAMAGNETIC RESONANCE; SOL-GEL PROCESS; SOL-GELS; TUNGSTATE MINERALS; VANADIUM; X RAY DIFFRACTION;

AGGLOMERATED PARTICLES; BIVO4; CHARACTERISTIC PEAKS; DIFFUSE REFLECTANCE SPECTRUM; MOLYBDENUM DOPING; OPTICAL BAND GAP ENERGY; RAMAN; VISIBLE LIGHT REGION;

MOLYBDENUM OXIDE;

EID: 84921328455 PISSN: 13698001 EISSN: None Source Type: Journal
DOI: 10.1016/j.mssp.2014.12.057 Document Type: Article

Times cited : (58)

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