Study of Ti-rich and Al-rich contact metallization for AlGaN/GaN HEMT power devices

ECS Transactions

Volumn 64, Issue 7, 2014, Pages 263-272

  Bertrand, D ^a   Fayolle, M ^a   Torres, A ^a   Blanquet, E ^b   Volpi, F ^b  

^a CEA LETI   (France)

^b UNIV GRENOBLE ALPES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ALUMINUM NITRIDE; ANNEALING; ELECTRIC CONTACTORS; GALLIUM NITRIDE; INTERFACES (MATERIALS); METALLIZING; NITRIDES; NITROGEN; OHMIC CONTACTS; PUMPS; SILICON; SILICON CARBIDE; SUBSTRATES;

ALGAN SUBSTRATES; ALGAN/GAN HEMTS; ALN LAYERS; ANNEALING TEMPERATURES; CONTACT METALLIZATION; LOW RESISTIVITY; POWER DEVICES; TI/AL RATIOS;

ALUMINUM GALLIUM NITRIDE;

EID: 84921057971     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/06407.0263ecst     Document Type: Conference Paper

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