Influence of the silicon nitride oxidation on the performances of NCLAD isolation

European Solid-State Device Research Conference

Volumn , Issue , 1996, Pages 149-152

  Tixier, A ^a   Senez, V ^a   Baccus, B ^a   Marmiroli, A ^b   Carnevale, G P ^b   Colpani, P ^b   Rebora, A ^b  

^a Institut Superieur de l'Electronique et du Numerique   (France)

^b STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84920729764     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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2. B. Baccus, D. Collard, P. Ferreira, V. Senez and E. Vandenbossche, -IMPACT-4 User's guide, Version 4.7, Feb. 1995.
3. JANAF Interim Thermocheniical Tables, The Dow Chimical Co., Midland, Michigan.
4. ndedition, pp. 260.
5. B.E. Deals and S.S. Grove, -Jap. J. Appl. Phys., 36, pp 3770, 1965.
6. T. Enomoto, R. Ando, H. Morita and H. Nakayama, -Jap. J. Appl. Phys., 17, 6, pp 1049, June 1978.
7. A. Rebora, -SGS-THOMSON Microelectronics Internal Report, 1995.
8. T.I. Kamins, -Oxidation of Silicon Nitride, unpublished, July 1981.