A 0.6 μm Si bipolar technology with 17 ps CML gate delay and 30 GHz static frequency divider

European Solid-State Device Research Conference

Volumn , Issue , 1995, Pages 414-420

  Bock J ^a   Popp, J ^a   Felder, A ^a   Meister, T F ^a   Rest, M ^a   Schreiter, R ^a   Aufinger, K ^a   Kopl, R ^a   Boguth, S ^a   Treitinger, L ^a  

^a SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TECHNOLOGY; GATE DELAYS; STATIC FREQUENCY DIVIDERS;

EID: 84920724071     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (0)