Physics-of-failure, condition monitoring, and prognostics of insulated gate bipolar transistor modules: A review

IEEE Transactions on Power Electronics

Volumn 30, Issue 5, 2015, Pages 2413-2426

  Oh, Hyunseok ^a   Han, Bongtae ^a,b   McCluskey, Patrick ^a   Han, Changwoon ^c   Youn, Byeng D ^d  

^a UNIVERSITY OF MARYLAND   (United States)

^b Sungkyunkwan University   (South Korea)

^c Korea Electronic Technology Institute (KETI)   (South Korea)

^d Seoul National University   (South Korea)

Author keywords

Condition monitoring (CM); insulated gate bipolar transistor (IGBT); physics of failure (PoF); prognostics.

Indexed keywords

AUTOMOBILE MANUFACTURE; CONDITION MONITORING; POWER MARKETS; SYSTEMS ENGINEERING;

HYBRID/ELECTRIC VEHICLES; INDUSTRIAL EQUIPMENT; INSULATED GATE BIPOLAR TRANSISTOR MODULES; MISSION CRITICAL APPLICATIONS; PHYSICS OF FAILURES; PROGNOSTICS; RENEWABLE ENERGIES; RESEARCH TOPICS;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

EID: 84920160381     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2014.2346485     Document Type: Article

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