Optimizing performance of silicon-based p-n junction photodetectors by the piezo-phototronic effect

ACS Nano

Volumn 8, Issue 12, 2014, Pages 12866-12873

  Wang, Zhaona ^a,b   Yu, Ruomeng ^a   Wen, Xiaonan ^a   Liu, Ying ^a   Pan, Caofeng ^c   Wu, Wenzhuo ^a   Wang, Zhong Lin ^a,c  

^a Georgia Institute of Technology   (United States)

^b BEIJING NORMAL UNIVERSITY   (China)

^c INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

p n junction; photodetector; piezo phototronic effect; silicon based

Indexed keywords

CARRIER MOBILITY; HETEROJUNCTIONS; II-VI SEMICONDUCTORS; OXIDE MINERALS; PHOTODETECTORS; PHOTONS; PIEZOELECTRICITY; POLARIZATION; ZINC OXIDE;

HETEROJUNCTION INTERFACES; INTEGRATED CIRCUIT TECHNOLOGY; OPTOELECTRONIC APPLICATIONS; P-N JUNCTION; PIEZO-PHOTOTRONIC EFFECTS; PIEZOELECTRIC POLARIZATIONS; PIEZOELECTRIC SEMICONDUCTORS; SILICON-BASED;

WIDE BAND GAP SEMICONDUCTORS;

EID: 84919756201     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn506427p     Document Type: Article

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