The self-heating effect and its influence on the electrical properties of SOI MOSFETs

Proceedings - IEEE International SOI Conference

Volumn , Issue , 1992, Pages 78-79

  Chai, Z ^a   Berger, M ^b  

^a FRAUNHOFER INSTITUTE FOR MICROELECTRONIC CIRCUITS AND SYSTEMS   (Germany)

^b UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84918815924     PISSN: 1078621X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SOI.1992.664803     Document Type: Conference Paper

References (5)

1. M. Berger and Z. Chai, "Estimation of Heat Transfer in SOI-MOSPETs" IEEE Trans, on Electron Devices, Vol. 38. No: 4, pp. 871-875, App. 1991.
2. Z. Chai and M. Berger, "Electrothermal Modelling of SOI MOSFETs" 1991 Internatinal Workshop on VLSI process and Device Modelling, Oiso, Kanagawa, Japan, Mai, 1991, pp. 60-61.
3. C. M. Snowden, Semicoductor Device Modelling, London, 1988
4. Z. Chai, "A Two Dimensional Physical Analytical Electrothermal Model for SOI MOSFETs" to be published.
5. L. J. McDaid et al., "Physical origin of negative differential resistance in SOI MOS transistors, " Electron. Lett., vol. 26. no. 1, pp. 74-76, Jan. 1989.