10 kV, 120 a SiC MOSFET modules for a power electronics building block (PEBB)

2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014

Volumn , Issue , 2014, Pages 55-58

  Dimarino, Christina ^a   Cvetkovic, Igor ^a   Shen, Zhiyu ^a   Burgos, Rolando ^a   Boroyevich, Dushan ^a  

^a Virginia Polytechnic Institute and State University   (United States)

Author keywords

10 kV SiC MOSFET; characterization; PEBB; power electronics building block; SiC module; simulation

Indexed keywords

BRIDGE CIRCUITS; POWER MOSFET; SCHOTTKY BARRIER DIODES; SILICON; SILICON CARBIDE; SILICON COMPOUNDS; STRUCTURAL DESIGN; WIDE BAND GAP SEMICONDUCTORS;

PEBB; POWER ELECTRONICS BUILDING BLOCKS; SIC MODULE; SIC MOSFET; SIMULATION;

POWER SEMICONDUCTOR DIODES;

EID: 84918567107     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/WiPDA.2014.6964623     Document Type: Conference Paper

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