Interstitial boron doping effects on the electronic and magnetic properties of graphitic carbon nitride materials

Solid State Communications

Volumn 203, Issue , 2015, Pages 35-40

  Pan, Hongzhe ^a   Zhang, Hongyu ^b   Liu, Hongmei ^a   Chen, Li ^a  

^a LINYI UNIVERSITY   (China)

^b EAST CHINA UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

A. Graphitic carbon nitride materials; B. Density functional theory; D. Boron doping effects

Indexed keywords

CALCULATIONS; ELECTRONIC STRUCTURE; GRAPHITIC CARBON NITRIDE; MAGNETISM;

BORON CARBO-NITRIDE; BORON-DOPING; ELECTRONIC AND MAGNETIC PROPERTIES; FIRST-PRINCIPLES CALCULATION; FORMATION ENERGIES; GEOMETRICAL AND ELECTRONIC STRUCTURES; INTERSTITIAL BORON; SPIN-POLARIZED ELECTRONS;

DENSITY FUNCTIONAL THEORY;

EID: 84915749654     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2014.11.017     Document Type: Article

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