Half metallic antiferromagnetic behavior in doped TiO2 rutile with double impurities (Os, Mo) from ab initio calculations

Thin Solid Films

Volumn 570, Issue PartA, 2014, Pages 45-48

  Fakhim Lamrani, A ^a,c   Ouchri, M ^a   Belaiche, M ^c   El Kenz, A ^a   Loulidi, M ^a   Benyoussef, A ^a,b  

^a MOHAMMED V UNIVERSITY   (Morocco)

^b MAScIR (Moroccan Foundation for Advanced Science Innovation and Research)   (Morocco)

^c MOHAMMED V UNIVERSITY IN RABAT   (Morocco)

Author keywords

Augmented spherical wave method; Diluted magnetic semiconductor; Half metallic antiferromagnetic

Indexed keywords

ANTIFERROMAGNETISM; CALCULATIONS; DENSITY FUNCTIONAL THEORY; DILUTED MAGNETIC SEMICONDUCTORS; GROUND STATE; II-VI SEMICONDUCTORS; IMPURITIES; MAGNETIC MOMENTS; MAGNETIC SEMICONDUCTORS; METALS; OXIDE MINERALS; SEMICONDUCTOR DOPING; SPIN POLARIZATION; TITANIUM DIOXIDE;

ANTIFERRO-MAGNETIC INTERACTIONS; ANTIFERROMAGNETIC BEHAVIORS; ANTIFERROMAGNETICS; AUGMENTED SPHERICAL WAVES; DOUBLE EXCHANGE MECHANISM; GENERALIZED GRADIENT APPROXIMATIONS; HALF METALLIC FERROMAGNETS; HALF-METALLIC ANTIFERROMAGNET;

MOLYBDENUM COMPOUNDS;

EID: 84913529571     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2014.09.005     Document Type: Article

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