The interaction of CI(2P3/2) and CI(2P1/2) with n-Si(100): Spontaneous etching

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 9, Issue 2, 1991, Pages 217-222

  Muller Markgraf W ^a   Rossi, M J ^a  

^a SRI INTERNATIONAL   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84912898504     PISSN: 07342101     EISSN: 15208559     Source Type: Journal    
DOI: 10.1116/1.577524     Document Type: Article

References (31)

1. D.L. Smith and P.G. Saviano, J. Vac. Sci. Technol. 21, 768 (1982).
2. D.L. Smith and R.H. Bruce, J. Electrochem. Soc. 129, 2045 (1982).
3. S.C. McNevin and G.E. Becker, J. Vac. Sci. Technol. B3, 485 (1985).
4. A.W. Kolfschoten, R.A. Haring, and A. Haring, and A.E. DeVries, J. Appl. Phys. 55, 3813 (1984).
5. F.H.M. Sanders, A.W. Kolfschoten, J. Dieleman, R.A. Haring, A. Haring, and A.E. DeVries, J. Vac. Sci. Technol. A2, 487 (1984).
6. R.A. Rossen and H.H. Sawin, J. Vac. Sci. Technol. A5, 1595 (1987).
7. J. Dieleman, F.H.M. Sanders, A.W. Kolfschoten, P.C. Zalm, A.E. DeVries, and A. Haring, J. Vac. Sci. Technol. B3, 1384 (1985).
8. T.A. Cleland and D.W. Hess, J. Vac. Sci. Technol. B7, 35 (1989).
9. E.A. Ogryzlo, D.E. Ibbotson, D.L. Flamm, and J.A. Mucha, J. Appl. Phys. 67, 3115 (1990).
10. Mei-Chen Chuang and J.W. Coburm, J. Vac. Sci. Technol. A 3, 1969, (1990).
11. T. Arikado, M. Sekine, H. Okano, and Y. Horiike, Mater. Res. Soc. Proc. 29, 167 (1984).
12. Y. Horiike, N. Hayasaka, M. Sekine, T. Arikado, M. Nakase, and H. Okano, Appl. Phys. A 44, 313 (1987).
13. R. Kullmer and D. Bäuerle, Appl. Phys. A 43, 227 (1987).
14. P. Mogyorosi, K. Piglmayer, R. Kullmer, and D. Bäuerle, Appl. Phys. A 45, 293 (1988).
15. R. Kullmer and D. Bäuerle, Appl. Phys. A 47, 377 (1988).
16. T.S. Bailer, D.J. Oostra, A.E. DeVries, and G.N.A. Van Veen, J. Appl. Phys. 60, 2321 (1986).
17. Y.-L., Li, Z.-J. Zhang, Q.-K. Zheng, Z.-K. Wu, and Q.-Z. Qin, Appl. Phys. Lett. 53, 792 (1989).
18. W. Sesselmann, E. Hudeczek and F. Bachmann, J. Vac. Sci. Technol. B 7, 1284 (1989).
19. W. MÜller-Markgraf and M.J. Rossi, Rev. Sci. Instrum. 61, 1217 (1990).
20. W. Kern, Semicond. Int. 94 (April 1984); W. Kern, RCA Eng. 28–4, 99 (1983).
21. V.A. Burrows, Y.J. Chabal, G.S. Higashi, K. Raghavachari, and S.B. Christman, Appl. Phys. Lett. 53, 998 (1988).
22. J. Herrmann, LAM Research Corporation, Fremont, CA.
23. P.K. Charvat, E.E. Krueger and A.L. Ruoff, J. Vac. Sci. Technol. B 4, 812 (1986).
24. T.M. Mayer and R.A. Barker, J. Vac. Sci. Technol. 21, 757 (1982).
25. J.B. Jeffries, Mat. Res. Soc. Proc. 117, 41 (1988).
26. R.J. Madix and J.A. Schwarz, Surf. Sci. 24, 264 (1971).
27. R.B. Jackman, H. Ebert and J.S. Foord, Surf. Sci. 176, 183, (1986).
28. P.K. Larsen, N.V. Smith, M. Schlueter, H.H. Farrell, K.M. Ho, and M.L. Cohen, Phys. Rev. B 17, 2612 (1978).
29. J.V. Florio and W.D. Robertson, Surf. Sci. 18, 398 (1969).
30. D. Westphal and A. Goldmann, Surf. Sci. 131, 113 (1983).
31. D.J. Oostra, A. Haring, R.P. Van Ingen, and A.E. DeVries, J. Appl. Phys. 64, 315 (1988).