High-performance scaled flash-type EEPROMs with heavily oxynitrided tunnel oxide films

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 1992-December, Issue , 1992, Pages 465-468

  Fukuda, H ^a   Uchiyama, A ^a   Kuramochi, T ^a   Hayashi, T ^a   Iwabuchi, T ^a   Ono, T ^a   Takayashiki, T ^a  

^a OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; ELECTRON DEVICES; SILICA;

FLASH EEPROMS; OXYNITRIDATION; PROGRAM AND ERASE; SUBMICRON; TRAPPED CHARGE; TUNNEL OXIDES;

OXIDE FILMS;

EID: 84911762830     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1992.307402     Document Type: Conference Paper

References (9)

1. G. Verma and M. Mielke, "Reliability performance of ETOX based flash memories, " in Proc. 1988 Int. Reliability Phys. Symp., pp. 158-166, 1988
2. S. Aritome, R. Shirota, R. Kirisawa, T. Endoh, R. Nakayama, K. Sakui and F. masuoka, "A reliable bi-polarity write/erase technology in flash EEPROMs, " in IEDM Tech. Dig., 1990, pp. 111-114.
3. S. Haddad, C. Chang, A. Wang, J. Bustillo, J. Lien, T. Montalro and M. Van Buskirk, "An investigation of erasemode dependent hole trapping in flash EEPROM memory cell, " IEEE Electron Device Lett., vol. 11, no. ll, pp. 514-516, 1990.
4. K. Naruke, S. Yamada, E. Obi, S. Taguchi and M. Wada, "A new flash-erase cell with a side wall select-gate on its source side, " in IEDM Tech. Dig., 1989, pp. 603-606.
5. H. Fukuda, M. Yasuda, T. lwabuchi and S. Ohno, "Novel Np-oxynitridation technology for forming highly reliable EEPROM tunnel oxide films, " IEEE Electron Device Lett., vol. 12, no. ll, pp. 587-589, 1991.
6. S. K. Lai, J. Lee and V. K. Dham, "Electrical properties of nitrided-oxide systems for use in gate dielectric and EEPROM, " in IEDM Tech. Dig., pp. 190-193, 1983.
7. 2 films formed by in situ multiple rapid thermal processing, " IEEE Trans. Electron Devices, vol. 39, no. 1, pp. 127-133, 1992
8. M. Koyanagi, A. G. Lewis, R. A. Martin, T.-Y. Huangand J. Y. C hen, "Hot-electron-induced punch through (HElP) effects in submicrometer PMOSFETs, "IEEE Trans. Electron Devices, voi. ED-34, no. 4, pp. 839-844, 1987.
9. 2 films in an Np ambient, " in IEDM Tech. Dig., 1990, pp. 425-428.