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Volumn 90, Issue 20, 2014, Pages

Tuning the near-gap electronic structure of tin-halide and lead-halide perovskites via changes in atomic layering

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EID: 84911166862     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.90.205202     Document Type: Article
Times cited : (43)

References (45)
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    • See Supplemental Material at for computed phonon modes and frequencies of Cs-containing compounds, and plots of average electrostatic potential along the direction of layering
    • See Supplemental Material at http://link.aps.org/supplemental/10.1103/PhysRevB.90.205202 for computed phonon modes and frequencies of Cs-containing compounds, and plots of average electrostatic potential along the direction of layering.
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    • We have also performed the set of band gap calculations analogous to Fig. 7(b) in which tetragonal unit cell parameters are relaxed, rather than constrained. To the eye, the results of these calculations are nearly identical to Fig. 7(b)
    • We have also performed the set of band gap calculations analogous to Fig. 7(b) in which tetragonal unit cell parameters are relaxed, rather than constrained. To the eye, the results of these calculations are nearly identical to Fig. 7(b).


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