In-plane epitaxial growth of silicon nanowires and junction formation on Si(100) substrates

Nano Letters

Volumn 14, Issue 11, 2014, Pages 6469-6474

  Yu, Linwei ^a,b   Xu, Mingkun ^a   Xu, Jie ^a   Xue, Zhaoguo ^a   Fan, Zheng ^b   Picardi, Gennaro ^b   Fortuna, Franck ^c   Wang, Junzhuan ^a   Xu, Jun ^a   Shi, Yi ^a   Chen, Kunji ^a   Roca I Cabarrocas, Pere ^b  

^a NANJING UNIVERSITY   (China)

^b LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

^c UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

epitaxy growth; In plane nanowire; junction formation; self assembly

Indexed keywords

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; INTERFACES (MATERIALS); NANOWIRES; SELF ASSEMBLY; SEMICONDUCTOR JUNCTIONS; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

CONDUCTIVE ATOMIC FORCE MICROSCOPY; CROSS-SECTION ANALYSIS; CRYSTALLOGRAPHIC ORIENTATIONS; JUNCTION FORMATION; NANOSCALE JUNCTIONS; PRECISE LOCATIONS; SI (100) SUBSTRATE; SILICON NANOWIRES;

SUBSTRATES;

EID: 84909987650     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl503001g     Document Type: Article

References (29)

1. Rurali, R. Rev. Mod. Phys. 2010, 82 (1) 427
2. Schmidt, V.; Wittemann, J. V.; Gösele, U. Chem. Rev. 2010, 110 (1) 361-388
3. Wagner, R. S.; Ellis, W. C. Appl. Phys. Lett. 1964, 4 (5) 89
4. Freer, E. M.; Grachev, O.; Duan, X.; Martin, S.; Stumbo, D. P. Nat. Nanotechnol. 2010, 5 (7) 525-530
5. Xiang, Y.; Keilbach, A.; Moreno Codinachs, L.; Nielsch, K.; Abstreiter, G.; Fontcuberta i Morral, A.; Bein, T. Nano Lett. 2010, 10 (4) 1341-1346
6. Dayen, J. F.; Rumyantseva, A.; Ciornei, C.; Wade, T. L.; Wegrowe, J. E.; Pribat, D.; Cojocaru, C. S. Appl. Phys. Lett. 2007, 90 (17) 173110
7. Shan, Y.; Fonash, S. J. ACS Nano 2008, 2 (3) 429-434
8. Tsivion, D.; Schvartzman, M.; Popovitz-Biro, R.; von Huth, P.; Joselevich, E. Science 2011, 333 (6045) 1003-1007
9. Schvartzman, M.; Tsivion, D.; Mahalu, D.; Raslin, O.; Joselevich, E. Proc. Natl. Acad. Sci. U.S.A. 2013, 110 (38) 15195
10. Yu, L.; Alet, P.-J.; Picardi, G.; Roca i Cabarrocas, P. Phys. Rev. Lett. 2009, 102 (12) 125501
11. Yu, L.; Roca i Cabarrocas, P. Phys. Rev. B 2009, 80 (8) 085313-5
12. Yu, L.; Roca i Cabarrocas, P. Phys. Rev. B 2010, 81 (8) 085323
13. Yu, L.; Roca i Cabarrocas, P. Physica E 2012, 44 (6) 1045-1049
14. Lopez, F. J.; Hemesath, E. R.; Lauhon, L. J. Nano Lett. 2009, 9 (7) 2774-2779
15. Volker, S.; Joerg, V. W.; Stephan, S.; Ulrich, G. Adv. Mater. 2009, 21 (25-26) 2681-2702
16. Li, W.; Varlamov, S.; Jung, M.; Huang, J. Int. J. Photoenergy 2014, 2014, 9
17. Schwarzkopf, J.; Selle, B.; Schmidbauer, M.; Fuhs, W. Thin Solid Films 2003, 427 (1-2) 274-278
18. Labrune, M.; Bril, X.; Patriarche, G.; Largeau, L.; Mauguin, O.; Roca i Cabarrocas, P. EPJ. Photovoltaics 2012, 3, 30303
19. Roca i Cabarrocas, P.; Cariou, R.; Labrune, M. J. Non-Cryst. Solids 2012, 358 (17) 2000-2003
20. Wen, C. Y.; Reuter, M. C.; Tersoff, J.; Stach, E. A.; Ross, F. M. Nano Lett. 2009, 9, 3296
21. Wang, H.; Zepeda-Ruiz, L. A.; Gilmer, G. H.; Upmanyu, M. Nat. Commun. 2013, 4, 1956
22. Bernstein, N.; Aziz, M. J.; Kaxiras, E. Phys. Rev. B 2000, 61 (10) 6696
23. Puglisi, R. A.; Tanabe, H.; Chen, C. M.; Atwater, H. A. Mater. Sci. Eng., B 2000, 73 (1-3) 212-217
24. Csepregi, L.; Kennedy, E. F.; Mayer, J. W.; Sigmon, T. W. J. Appl. Phys. 1978, 49 (7) 3906-3911
25. Yang, B.; Zhang, P.; Savage, D. E.; Lagally, M. G.; Lu, G.-H.; Huang, M.; Liu, F. Phys. Rev. B 2005, 72 (23) 235413
26. Chen, W.; Yu, L.; Misra, S.; Fan, Z.; Pareige, P.; Patriarche, G.; Bouchoule, S.; Cabarrocas, P. R. i. Nat. Commun. 2014, 5, 4134
27. Yu, L.; Chen, W.; O'Donnell, B.; Patriarche, G.; Bouchoule, S.; Pareige, P.; Rogel, R.; Salaun, A. C.; Pichon, L.; Roca i Cabarrocas, P. Appl. Phys. Lett. 2011, 99 (20) 203104-3
28. Sze., S. M. Physics of Semiconductor Devices, 2 nd ed.; Wiley: New York, 1981; Vol. 1.
29. Dorf, R. C. The Electrical Engineering Handbook, 3rd ed.; CRC Press: Boca Raton, FL, 2006.