Empirical model for the effective electron mobility in silicon nanowires

IEEE Transactions on Electron Devices

Volumn 61, Issue 11, 2014, Pages 3601-3607

  Granzner, Ralf ^a   Polyakov, Vladimir M ^b   Schippel, Christian ^c   Schwierz, Frank ^a  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^b FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^c GLOBALFOUNDRIES   (Germany)

Author keywords

Effective field; empirical model; mobility; MOSFET; phonon scattering; silicon nanowires (SiNWs); surface roughness (SR)

Indexed keywords

PHONON SCATTERING;

EFFECTIVE ELECTRON MOBILITY; EFFECTIVE FIELD; EMPIRICAL MODEL; MOS-FET; SILICON NANOWIRES;

CARRIER MOBILITY;

EID: 84908454194     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2014.2354254     Document Type: Article

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