Quantum carrier reinvestment-induced ultrahigh and broadband photocurrent responses in graphene-silicon junctions

ACS Nano

Volumn 8, Issue 10, 2014, Pages 10270-10279

  Liu, Fangze ^a   Kar, Swastik ^a  

^a NORTHEASTERN UNIVERSITY   (United States)

Author keywords

carrier dynamics; graphene; optical transitions; photodetector; quantum gain

Indexed keywords

GRAPHENE; HALL MOBILITY; HOLE MOBILITY; INVESTMENTS; OPTICAL TRANSITIONS; PHOTOCURRENTS; PHOTODETECTORS; PHOTONS; SEMICONDUCTOR JUNCTIONS; SILICA; SILICON OXIDES; SPECTROSCOPIC ANALYSIS;

CARRIER DYNAMICS; OPTOELECTRONIC APPLICATIONS; PHOTOCURRENT MEASUREMENT; PHOTOCURRENT RESPONSE; PHOTOCURRENT SPECTROSCOPY; QUANTUM GAIN; RECOMBINATION DYNAMICS; TUNABLE PHOTODETECTORS;

SUBSTRATES;

EID: 84908426141     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn503484s     Document Type: Article

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