Modeling 1/f noise and extraction of the spice noise parameters using a new extraction procedure

European Solid-State Device Research Conference

Volumn , Issue , 1998, Pages 468-471

  Van Heijningen, Marc ^a   Vandamme, E ^a   Deferm, L ^a   Vandamme, Lode ^b  

^a IMEC   (Belgium)

^b EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; EXTRACTION; SCATTERING PARAMETERS;

EXTRACTION PROCEDURE; NOISE ANALYSIS; NOISE PARAMETERS; OPERATING REGIMES; SPICE NOISE MODEL; SUB-MICRON CMOS TECHNOLOGY; TRAP DENSITY; TWO PARAMETER;

SPICE;

EID: 84908217424     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

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3. G. Ghibaudo et at., Phys. Stat. Sol., vol. 124, pp. 571-581, 1991.
4. S. Christensson et at., Solid-State Electron., vol 11, pp. 797-812, 1968.
5. G. Reimbold, IEEE Trans. Electron Devices, vol. 31, pp. 1190-1198, Sep. 1984.