Mobility enhancement of two-dimensional holes in strained Si/SiGe MOSFETs

European Solid-State Device Research Conference

Volumn , Issue , 1998, Pages 524-527

  Oberhuber, R ^a   Zandler, G ^a   Vogl, P ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; GERMANIUM; MONTE CARLO METHODS; MOSFET DEVICES; SILICON;

INVERSION CHANNELS; LOW FIELD MOBILITY; MOBILITY ENHANCEMENT; QUANTITATIVE PREDICTION; SCATTERING MECHANISMS; STRAINED BAND STRUCTURE; STRAINED-SI; STRAINED-SI/SIGE;

HOLE MOBILITY;

EID: 84908192549     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)

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