Optimum carrier concentration in n-type PbTe thermoelectrics

Advanced Energy Materials

Volumn 4, Issue 13, 2014, Pages

  Pei, Yanzhong ^a   Gibbs, Zachary M ^b   Gloskovskii, Andrei ^c   Balke, Benjamin ^d   Zeier, Wolfgang G ^d   Snyder, G Jeffrey ^b  

^a TONGJI UNIVERSITY   (China)

^b California Institute of Technology   (United States)

^c DESY   (Germany)

^d JOHANNES GUTENBERG UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

FERMI LEVEL; IV-VI SEMICONDUCTORS; LANTHANUM COMPOUNDS; TEMPERATURE DISTRIBUTION; THERMAL CONDUCTIVITY; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY; X RAY PHOTOELECTRON SPECTROSCOPY; X RAYS;

ELECTRICAL TRANSPORT PROPERTIES; HARD X-RAY PHOTOELECTRON SPECTROSCOPY; INFRARED REFLECTANCE; LATTICE THERMAL CONDUCTIVITY; STRUCTURE MODIFICATION; TEMPERATURE DEPENDENCE; THERMO-ELECTRIC MATERIALS; THERMOELECTRIC FIGURE OF MERIT;

CARRIER CONCENTRATION;

EID: 84908150236     PISSN: 16146832     EISSN: 16146840     Source Type: Journal    
DOI: 10.1002/aenm.201400486     Document Type: Article

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