SCOPUS 정보 검색 플랫폼

Volumn 6, Issue 21, 2014, Pages 12792-12797

Scalable high-mobility MoS2 thin films fabricated by an atmospheric pressure chemical vapor deposition process at ambient temperature

(9) Huang, Chung Che a Al Saab, Feras a Wang, Yudong a Ou, Jun Yu a Walker, John C a Wang, Shuncai a Gholipour, Behrad a Simpson, Robert E b Hewak, Daniel W a

a UNIVERSITY OF SOUTHAMPTON (United Kingdom)

b SINGAPORE UNIVERSITY OF TECHNOLOGY AND DESIGN (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATMOSPHERIC CHEMISTRY; ATMOSPHERIC PRESSURE; ATMOSPHERIC TEMPERATURE; CHEMICAL VAPOR DEPOSITION; ELECTRONIC PROPERTIES; ENERGY DISPERSIVE SPECTROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; II-VI SEMICONDUCTORS; LAYERED SEMICONDUCTORS; MOLYBDENUM COMPOUNDS; NANOCRYSTALLINE MATERIALS; OXIDE MINERALS; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; ZINC OXIDE;

ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION; C-PLANE SAPPHIRE SUBSTRATES; CONVENTIONAL LITHOGRAPHY; CRYSTALLINE STRUCTURE; ENERGY DISPERSIVE X RAY SPECTROSCOPY; HALL EFFECT MEASUREMENT; OPTICAL AND ELECTRONIC PROPERTIES; OPTOELECTRONIC APPLICATIONS;

THIN FILMS;

EID: 84908010487 PISSN: 20403364 EISSN: 20403372 Source Type: Journal
DOI: 10.1039/c4nr04228j Document Type: Article

Times cited : (85)

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