Excess noise in sub-micron silicon FET: Characterization, prediction and control

European Solid-State Device Research Conference

Volumn 13-15 Sept. 1999, Issue , 1999, Pages 252-255

  Franca Neto, Luiz M ^a   Harris, James S ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS;

DEEP SUB-MICRON; DEVICE CHANNEL; EFFECTIVE MASS; EXCESS NOISE; LATERAL ELECTRIC FIELD; PREDICTION AND CONTROL; SUBMICRON; TRANSPORT MODES;

CARRIER CONCENTRATION;

EID: 84907900133     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. L.M. Fraca-Neto et al., IEE IDM, Dec. 1997.
2. L.M. Fraca-Neto, and J.S. Harris, IEE Top. Mtg. on SiMIC in R Sys., Sep. 1998.
3. M. Lundstrom, "Fundamentals of Carier Transport", in Mod. Ser on Solid State Dev., Vol X, Addison-Wesley, 1989.
4. A. Van der Ziel, "Noise: Sources, Characterization, Measurement, " PrentiCe-Hal, 1970.
5. A.A. Abidi, IEE Trans. on Electron Devices, vol. ED-33, no. 11, pp. 1801-1805, Nov. 1986.