Resonant-cavity-enhanced photodiode using silicon-on-Anything technology

European Solid-State Device Research Conference

Volumn 13-15 Sept. 1999, Issue , 1999, Pages 524-527

  Sinnis, V S ^a,b   Seto, M ^a   Van Deurzen, M H W A ^a   Maas, H G R ^a   Dekker, R ^a   Alexander Moonen, E M L ^a   T'Hooft, G W ^a   Hoekstra, W ^a   De Boer, W B ^a   Theunissen, M J J ^a   Morrison, A P ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

^b UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; PHOTODIODES; REFLECTION;

BRAGG STACKS; METAL MIRROR; PEAK RESPONSIVITY; RESONANT CAVITY ENHANCED; SI/SIGE; SILICON-ON-INSULATOR SUBSTRATES; TEMPORAL RESPONSE; THIN BURIED OXIDES;

SILICON;

EID: 84907899386     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. A. Chin and T. Y Chang, "Multilayer Reflectors by Molecular-Beam Epitaxy for Resonance Enhanced Absorption in Thin High-Speed Detectors", J. Vac. Sci. Technol., vol. B8, Mar.l Apr. 1990, pp. 339-342.
2. M. S. Dnlii, K. Kishino, J.-1. Chyi Arsenault, J. Reed, S. Noor Mohammad, and H. Mork, "Resonant Cavity Enhanced AIGaAs/GaAs Heterojunction Phototransistors with an Intermediate InGaAs Layer in the Collector", Appl. Phys. Lett., vol. 57, Aug. 1990, pp. 750-752.
3. M. Seto, W. B. de Boer, V. S. Sinnis, A. P. Morrison, W. Hoekstra, and S. de Jager, "SilSiGe Resonant-Cavity Photodiodes for Optical Storage Applications", Appl. Phys. Lett., vol, 72, Mar. 1998, pp. 1550-1552.
4. V. S. Sinnis, M. Seto, G. W. 't Hooft, Y. Watabe, A. P. Moriison, W. Hoekstra, and W. B. de Boer, "Silicon-Based ResonantCavity-Enhanced Photodiode with a Buried Si02 Reflector" Appl. Phys. Lett., vol. 74, Mar. 1999, pp. 1203-1205.
5. R. Dekker, P. Baltus, M. van Deurzen, W. van den Einden, H. Maas, A. Wagemans, "An Ultra Low-Power RF Bipolar Technology on Glass", in IEDM Technical Digest, IEEE, Piscataway, New Jersey, 1997, pp. 921-923.