Field effect in organic devices based on solution-doped PPV

European Solid-State Device Research Conference

Volumn 13-15 Sept. 1999, Issue , 1999, Pages 704-707

  Scheinert, S ^a   Paasch, G ^b   Pohlmann, S ^a   Horhold, H H ^c   Stockmann, R ^c  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^b IFW DRESDEN   (Germany)

^c FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

MOS CAPACITORS;

C-V MEASUREMENT; DOPING CONCENTRATION; DOPING METHODS; FIELD EFFECTS; LARGE HYSTERESIS; ORGANIC DEVICES; REPEATED MEASUREMENTS; SWEEP DIRECTIONS;

FIELD EFFECT TRANSISTORS;

EID: 84907886118     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. DJ. Gundlach, Y.Y. Lin, T.N. Jackson, S.F. Nelson and D.G. Schlom, lEEE Electr. Dev. Lett., 18 (1997) 87.
2. H. Sirringhaus, R.H. Friend, X.C. Li, S.C. Moratti, A.R Holmes and N. Feeder, AppJ. Phys. Lett., 26 (1997) 3871.
3. C.D. Dimitrakopoulos, S. Purushothaman, J. Kymissis, A. Callegari and J.M. Shaw, Science, 283 (1999) 822
4. A.R. Brown, D.M. Pomp, C.M. Hart, D.M. de Leeuw, DRM. Klaassen, E.E. Havinga, P. Herwig, K. Millen, J. AppJ. Phys., 79 (1996) 2136.
5. Y.Y. Lin, D.J. Gundlach, S.F. Nelson, T.N. Jackson, IEEE Trans. ED, 44 (1997) 1325.
6. H. Sirringhaus, N. Tessler, R.H. Friend, Science, 280 (1998) 1741.
7. T.M. Jackson, Y.Y. Lin, D.J. Gundlach, H. Klauk, IEEE Journal of Selected Topics in Quantum Electronics, 40 (1998) 100.
8. S. Scheinett, G. Paasch, R. Tecklenburg, Proc. ESSDERC'98. Editions Frontiers, 1998, p.628.